DescriptionThe USBULC6-2F3 is a monolithic, application specific discrete device dedicated to ESD protection of high speed interfaces.Its ultra low line capacitance secures a high level of signal integrity without compromizing the protection of downstream sensitive chips against the most stringently characterized ESD strikes.Figure 1.Pin layout (bump side)Figure 2.Device configurationTM: IPAD is a trademark of STMicroelectronics.Flip Chip(4 bumps)B12AA2A1B2B1Note: B1 and B2 bumps must be grounded on the PCB togetherwww.st.comCharacteristicsUSBULC6-2F32/9 1 Characteristics Table 1.Absolute maximum ratings (Tamb = 25 C)SymbolParameterValueUnit V PPESD discharge IEC 61000-4-2, air dischargeESD discharge IEC 61000-4-2, contact discharge15 8kVP PPPeak pulse power dissipation (8/20 s)60WTjMaximum junction temperature125 CT opOperating temperature range-30 to + 85 CT stgStorage temperature range-55 to +150 CTable 2.Electrical characteristics (Tamb = 25 C)SymbolParameter V BRBreakdown voltageI Features Ultra low diode capacitance (1.2 pF max)Two data lines (D+ and D-) protected against 15 kV ESDBreakdown voltage VBR = 6.0 V minFlip Chip 400 m pitch, lead-freeVery low leakage currentVery small PCB areaRoHS compliantBenefits Minimized impact on rise and fall times for maximum data integrityLow PCB space occupationHigher reliability offered by monolithic integrationComplies with the following standards IEC 61000-4-2 level 4 on external pins:15 kV (air discharge)8 kV (contact discharge)MIL STD 883G - Method 3015.725 kV (Human body model)Application High speed USB port in wireless handsets (up to 480 Mb/s according to USB 2.0 high speed specification) DescriptionThe USBULC6-2F3 is a monolithic, application specific discrete device dedicated to ESD protection of high speed interfaces.Its ultra low line capacitance secures a high level of signal integrity without compromizing the protection of downstream sensitive chips against the most stringently characterized ESD strikes.Figure specification) DescriptionThe USBULC6-2F3 is a