DescriptionThe PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-Es superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)Figure 1.Pin connection PowerSO-10RF(formed lead)PowerSO-10RF(straight lead)GateSource Drainwww.st.com Table 1.Device summaryOrder codesPackagePackingPD85035-EPowerSO-10RF (formed lead)TubePD85035S-EPow Features Excellent thermal stabilityCommon source configurationP OUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 VPlastic packageESD protectionIn compliance with the 2002/95/EC1 European directive DescriptionThe PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-Es superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)Figure specifications are available at: www.st.comPac