DescriptionThis application specific Power MOSFET is the third generation of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.Figure 1.Internal schematic diagram TypeV DSS R DS(on) max IDSTS9NH3LL30 V0.022 9 ASO-8Table 1.Device summaryOrder codeMarkingPackagePackagingSTS9NH3LLS9NH3LLSO-8Tape & reelwww.st.comContents STS9NH3LL2/13 Contents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Features Optimal RDS(on) x Qg trade-off @ 4.5 VConduction losses reducedSwitching losses reducedApplication Switching applicationsDescriptionThis application specific Power MOSFET is the third generation of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.Figure 1.Internal schematic diagram TypeV DSS R DS(on) max IDSTS9NH3LL30 V0.022 9 ASO-8Table 1.Device summaryOrder codeMarkingPackagePackagingSTS9NH3LLS9NH3LLSO-8Tape & reelwww.st.comContents STS9NH3LL2/13 Contents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . specifications are available at: www.s