N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ (3.3x3.3) STripFET™ V Power MOSFET
DescriptionThis product utilizes the 5th rules of STs proprietary STripFET technology. The lowest available RDS(on) *Q g, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.Figure 1.Internal schematic diagram TypeV DSS R DS(on) max IDSTL9N3LLH530 V< 0.019 9 A (1)1.The value is rated according Rthj-pcbPowerFLAT(3.3x3.3)(Chip scale package)Table 1.Device summaryOrder codeMarkingPackagePackagingSTL9N3LLH59N3LPowerFLAT (3.3x3.3)Tape and reelwww.st.com ContentsSTL9N3LLH52/12 Doc ID 16012 Rev 1Contents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . Features RDS(on) * Qg industry benchmarkExtremely low on-resistance RDS(on) Very low switching gate chargeHigh avalanche ruggednessLow gate drive power lossesApplications Switching applicationsDescriptionThis product utilizes the 5th rules of STs proprietary STripFET technology. The lowest available RDS(on) *Q g, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.Figure 1.Internal schematic diagram TypeV DSS R DS(on) max IDSTL9N3LLH530 V< 0.019 9 A (1)1.The value is rated according Rthj-pcbPowerFLAT(3.3x3.3)(Chip scale package)Table 1.Device summaryOrder codeMarkingPackagePackagingSTL9N3LLH59N3LPowerFLAT (3.3x3.3)Tape and reelwww.st.com ContentsSTL9N3LLH52/12 Doc ID 16012 Rev 1Contents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . specifications, grade definitions and pr
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