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FDY101PZ Single P-Channel (- 2.5V) Specified PowerTrench® MOSFET
This Single P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = - 2.5v.
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FDY101PZ
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| FDY101PZ Schematico | FDY101PZ Circuit | FDY101PZ Operating Parameter | FDY101PZ PDF |
| FDY101PZ Options | FDY101PZ Release Notes | FDY101PZ Explanation | FDY101PZ Catalog |
| FDY101PZ Specs | FDY101PZ 数据 | FDY101PZ Prototype | FDY101PZ Process Change Notification |
| FDY101PZ Errata | FDY101PZ MOQ | FDY101PZ Broker | FDY101PZ данные |
| FDY101PZ gleichwertige | FDY101PZ Revision | FDY101PZ 示意圖 | FDY101PZ Features |
| FDY101PZ Data Sheet | FDY101PZ Design Idea | FDY101PZ 回路図 | FDY101PZ Schematische |
| FDY101PZ Pin-out | FDY101PZ Fichetechnique |











