INSULATED GATE BIPOLAR TRANSISTOR
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier havehigher usable current densities than comparable bipolar transistors, while atthe same time having simpler gate-drive requirements of the familiar powerMOSFET. They provide substantial benefits to a host of high-voltage, highcurrentapplications.
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IRGPH20S
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