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HEXFET® Power MOSFET


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

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IRFPE30, IRFP2907
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Other Descriptions

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IRFPE30 Samples IRFPE30 End-of-Life IRFP2907 數據 IRFP2907 Archive
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