V20120SG, VF20120SG, VB20120SG & VI20120SG High-Voltage Trench MOS Barrier Schottky Rectifier
Trench MOS Schottky technology, Low forward voltage drop, low power losses, High efficiency operation, Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package), Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package), Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.
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VB20120SG, VF20120SG-E3/4W, V20120SG-E3/4W, VF20120SG, V20120SG-E3, VB20120SG-E3/8W, V20120SG, VI20120SG-E3/4W, VB20120SG-E3/4W, 20120SG, VI20120SG
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