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Diode"Connected (EPAD?) MOSFET with Buffer Amplifier Output
This circuit is a diode"connected EPAD MOSFET with buffer amplifier set up in the non-inverting amplifier configuration. VO is equal to VT multiplied by the gain G=1+RB/RA. The drain DN1 of the EPAD MOSFET is shorted to the gate terminal GN1. When connected in this manner, this circuit produces a drain current Ids that flows through the MOSFET which increases exponentially with increases of VO, with Ids versus VO characteristics similar to that of a forward biased diode. VO is set by the selection of bias resistor R and the specific EPAD MOSFET part number. At a voltage about 55mV above threshold voltage of the EPAD MOSFET, or at 68?A Ids, the VO tends to be temperature stable. At other voltage or current levels, the tempco changes from positive to zero to negative as a function of drain current. This tempco characteristic is determined by appropriate selection of resistor value of R.
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½ ALD1109xx, ¼ ALD1108xx
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