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Basic MOSFET / EPAD? MOSFET Inverter Circuit
This circuit shows a basic MOSFET (or EPAD MOSFET) inverter circuit. The drain terminal is the output and the gate terminal is the input. The output voltage VO is determined by the input voltage and the output loading R. VO can be a voltage either above or below threshold voltage, which depends on the drain current Ids as controlled by the gate voltage, and which in turn depends on R value. The drain current is given by Ids = (V+ - VDS)/R.
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½ ALD1109xx, ¼ ALD1108xx
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| ¼ ALD1108xx Data Sheet | ¼ ALD1108xx RoHS | ¼ ALD1108xx Revision | ¼ ALD1108xx Reference Design |
| ¼ ALD1108xx 示意圖 | ¼ ALD1108xx Application Note | ¼ ALD1108xx Ersatz | ¼ ALD1108xx Mechanical Outline |
| ¼ ALD1108xx Prototyping | ¼ ALD1108xx Schéma | ¼ ALD1108xx 回路図 | ¼ ALD1108xx Схематический |
| ¼ ALD1108xx Design | ¼ ALD1108xx Datasheet | ¼ ALD1108xx Circuit | ¼ ALD1108xx データシート |
| ¼ ALD1108xx Equivalent | ¼ ALD1108xx Ficha técnica | ¼ ALD1108xx Explanation | ¼ ALD1108xx Feature |
| ¼ ALD1108xx Capacity | ¼ ALD1108xx Prototype | ¼ ALD1108xx Samples | ¼ ALD1108xx Inventory |
| ¼ ALD1108xx Description | ¼ ALD1108xx 데이터시트 | ¼ ALD1108xx Operating Parameter | ¼ ALD1108xx данные |
| ¼ ALD1108xx 相等于 | ¼ ALD1108xx equivalente | ½ ALD1109xx 数据 | ½ ALD1109xx Schematic |
| ½ ALD1109xx RoHS | ½ ALD1109xx Lead Time | ½ ALD1109xx Prototyping | ½ ALD1109xx Archive |
| ½ ALD1109xx gleichwertige | ½ ALD1109xx Specs | ½ ALD1109xx PDF | ½ ALD1109xx Leadtime |
| ½ ALD1109xx equivalente | ½ ALD1109xx Scheda | ½ ALD1109xx Errata | ½ ALD1109xx Feature |
| ½ ALD1109xx Design Idea | ½ ALD1109xx End-of-Life | ½ ALD1109xx Features | ½ ALD1109xx Description |
| ½ ALD1109xx Ficha técnica de | ½ ALD1109xx Xref | ½ ALD1109xx Esquema | ½ ALD1109xx Equivalent |
| ½ ALD1109xx User Guide | ½ ALD1109xx δελτίο | ½ ALD1109xx Suffix | ½ ALD1109xx Operating Parameter |
| ½ ALD1109xx Схематический | ½ ALD1109xx 示意圖 | ½ ALD1109xx Samples | ½ ALD1109xx Schéma |