8Mb Ultra-Low Power Asynchronous CMOS SRAM
The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor™s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.
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N08L1618C2AX-XX, N08L1618C2AB2, N08L1618C2AB, N08L1618C2A
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