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1Mb Ultra-Low Power Asynchronous CMOS SRAM


The N01L083WC2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using AMI Semiconductor™s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.

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Relevant Keywords: 
N01L083WC2AT2, N01L083WC2AT, N01L083WC2AN2, N01L083WC2AN, N01L083WC2AX-XX, N01L083WC2A
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Other Descriptions

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