Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
Drain-S ource Breakdown Voltage BVDS S = VGS 0V, ID -250uA = -30 V Zero Gate Voltage Drain Current IDS S VDS -24V, VGS 0V = = -1 uA Gate-Body Leakage IGS S VGS 20V, VDS 0V = = nA 100
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