30 GHz SiGe Bipolar Transistor
The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. The transistor exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appropriate external passive components.
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LPT16ED
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| LPT16ED 데이터시트 | LPT16ED Inventory | LPT16ED Archive | LPT16ED 示意圖 |
| LPT16ED Data Sheet | LPT16ED équivalent | LPT16ED Equivalent | LPT16ED Release Notes |
| LPT16ED Errata | LPT16ED Datasheet | LPT16ED equivalente | LPT16ED gleichwertige |
| LPT16ED Component | LPT16ED Product Brief | LPT16ED δελτίο | LPT16ED PDF |
| LPT16ED Catalog | LPT16ED Availability | LPT16ED 相等於 | LPT16ED Ficha técnica |
| LPT16ED 回路図 | LPT16ED Features | LPT16ED replacement | LPT16ED Operating Parameter |
| LPT16ED Samples | LPT16ED Datenblatt | LPT16ED Fiche technique | LPT16ED Reference Design |
| LPT16ED End-of-Life | LPT16ED Схематический |











