DESCRIPTION and IDQ of 85 mA: 1 drain ­ Output power = 10 W (PEP) 2 gate ­ Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz 3 source, connected to flange ­ Efficiency = 39% at 900 MHz, 34% at 2200 MHz ­ dim = -31 dBc at 900 MHz, -28 dBc at 2200 MHz · Easy power control · Excellent ruggedness · High power gain · Excellent thermal stability 1 · Designed for broadband operation (HF to 2200 MHz) · No internal matching for broadband operation. 3 2 APPLICATIONS · RF power amplifiers for GSM, EDGE, CDMA and Top view MBK584 W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range · Broadcast drivers. DESCRIPTION Fig.1 Simplified outline. 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF f VDS IDQ PL Gp D dim OPERATION (MHz) (V) (