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Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: ULTRA LOW CURRENT CONSUMPTION, HIGH RIPPLE REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1167 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1165 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1111/1121 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology.

Title: HIGH RIPPLE-REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR

Abstract: The S-1112/1122 Series is a positive voltage regulator with a low dropout voltage, high outputvoltage accuracy, and low current consumption developed based on CMOS technology.

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & density surface mounting. .Plastic mold pakage containing highly reliable tubular type quartz crystal. .Excellent shock and heat resistance.

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation CPU Board

Abstract: It is a simple and small sized (100 100mm) hardware configuration. All of the I/O port round the SH7149 chip is connected to the extension connector of the board, allowing for easy hardware expansion. . The sample program convenient to advance software development for the SH7149 chip is provided.

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Plastic mold package incorporated tubular type quartz crystal. . Suitable for automatic and high density surface mounting. . Excellent shock and heat resistance. Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Plastic mold package incorporated tubular type quartz crystal. . Suitable for automatic and high density surface mounting. . Excellent shock and heat resistance. Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & density surface mounting. .Plastic mold pakage containing highly reliable tubular type quartz crystal. .Excellent shock and heat resistance.

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & density surface mounting. .Plastic mold pakage containing highly reliable tubular type quartz crystal. .Excellent shock and heat resistance.

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Plastic mold package incorporated tubular type quartz crystal. . Suitable for automatic and high density surface mounting. . Excellent shock and heat resistance. Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & density surface mounting. .Plastic mold pakage containing highly reliable tubular type quartz crystal. .Excellent shock and heat resistance.

Title: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & density surface mounting. .Plastic mold pakage containing highly reliable tubular type quartz crystal. .Excellent shock and heat...

Abstract: Compact tubular package 2.Photolithographic process.Excellent shock resistance and nvironmental characteristics.Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & density surface mounting. .Plastic mold pakage containing highly reliable tubular type quartz crystal. .Excellent shock and heat resistance.

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Plastic mold package incorporated tubular type quartz crystal. . Suitable for automatic and high density surface mounting. . Excellent shock and heat resistance. Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & density surface mounting. .Plastic mold pakage containing highly reliable tubular type quartz crystal. .Excellent shock and heat resistance.

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Plastic mold package incorporated tubular type quartz crystal. . Suitable for automatic and high density surface mounting. . Excellent shock and heat resistance. Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Plastic mold package incorporated tubular type quartz crystal. . Suitable for automatic and high density surface mounting. . Excellent shock and heat resistance. Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Plastic mold package incorporated tubular type quartz crystal. . Suitable for automatic and high density surface mounting. . Excellent shock and heat resistance. Real time clocks, Timers,

Title: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & density surface mounting. .Plastic mold pakage containing highly reliable tubular type quartz crystal. .Excellent shock and heat...

Abstract: Compact tubular package 2.Photolithographic process.Excellent shock resistance and nvironmental characteristics.Real time clocks, Timers,

Title: Large-Current Switching Applications

Abstract: FBET and MBIT processed (Original process of SANYO). · Low saturation voltage.· Large current capacity and wide ASO.

Title: HF Amplifier Applications

Abstract: · FBET series.· Ultrasmall-sized package permitting sets to be smallsized and slim. · High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ).

Title: 30V/12A High-Speed Switching Applications

Abstract: · Low collector-to-emitter saturation voltage : VCE(sat)=(-)0.5V (PNP), 0.4V (NPN) max. · Large current capacity.

Title: PNP / NPN Epitaxial Planar Silicon Transistors

Abstract: Low collector-to-emitter saturation voltage : VCE(sat)=--0.5V (PNP), 0.4V (NPN) max. • Large current capacity.

Title: 8-Unit, Low-Saturation Driver

Abstract: Large current capacity (400mA) and ow saturation voltage (0.5V max), • With spark killer diode provided.

Title: High-Performance Quad Comparator

Abstract: Wide supply voltage range (Single supply : 2.0 to 36.0V,dual supplies : ±1.0 to ±18.0V). Wide common-mode input voltage range (0 to VCC-1.5V). Open collector output enabling wired OR. Small current dissipation (0.8mA/VCC=5V, RL=Â¥) and power.

Title: Constant-Current Circuit Using 3-Terminal Regulator IC

Abstract: The S-817A Series comprises low-consumptioncurrent CMOS regulators that employ the CMOS process.

Title: 15/-9 V 8-Bit Programmable Power Supply Using the S-8330

Abstract: The S-8330 is a PWM-controlled boosting type switching regulator IC that incorporates an electronic volume (electronic voltage control) for output voltage adjustment, and a switching transistor.

Title: Frequency 300 kHz Step-Down Switching Regulator Controllers S-8520/8521 Series

Abstract: The major features of the S-8520/8521 are low current consumption by taking advantage of the CMOS process, and the use of the SOT-23-5 package, the smallest package in the world for a step-down switching regulator controller.

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: 1. Plastic mold package incorporated tubular type quartz crystal. 2. Suitable for automatic and high density surface mounting. 3. Excellent shock and heat resistance

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & high density surface mounting. .Plastic mold pakage containing highly eliable tubular type quartz crystal. .Excellent shock and heat resistance.

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Compact tubular package .Photolithographic process .Excellent shock resistance and environmental characteristics. .Real time clocks, Timers,

Title: Evaluation of Subsystem Clock Oscillation Circuit

Abstract: Plastic mold package incorporated tubular type quartz crystal. . Suitable for automatic and high density surface mounting. . Excellent shock and heat resistance. Real time clocks, Timers,

Title: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & density surface mounting. .Plastic mold pakage containing highly reliable tubular type quartz crystal. .Excellent shock and heat...

Abstract: Ultra thin type with 1.4mm Max.SMD type suitable for automatic & density surface mounting. .Plastic mold pakage containing highly reliable tubular type quartz crystal. .Excellent shock and heat resistance.

Title: PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors

Abstract: · High DC current gain.· High current capacity and wide ASO. · Low saturaion voltage.

Title: PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors

Abstract: · High DC current gain.· High current capacity and wide ASO. · Low saturaion voltage.

Title: Variable 4-Pin Voltage Regulator

Abstract: Wide operating voltage range : 7.5 to 35V 500mA output. On-chip thermal protector. On-chip overcurrent limiter. On-chip ASO protector.4-pin SIP package facilitating mounting and thermal design in case of transistor.

Title: TV Tuner Band Selector

Abstract: VHF "L" band power supply output. VHF "H" band power supply output. UHF power supply output. CATV power supply output.

Title: PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors

Abstract: High DC current gain.· Large current capacity and wide ASO.· Low saturation voltage.

Title: PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors

Abstract: · High DC current gain.· High current capacity and wide ASO. · Low saturaion voltage.

Title: PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors

Abstract: · High DC current gain.· High current capacity and wide ASO. · Low saturaion voltage.

Title: Printer Driver

Abstract: Has a large current capacity (400mA) and low saturation voltage (0.5V max). Has a motor driver with a spark suppressor. Ideal for various battery-operated preinter drivers.

Title: General-Purpose Switching Device Applications

Abstract: The MCH6644 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density mounting. Excellent ON-resistance characteristic. Best suited for load switches. 4V drive

Title: 2-Channel Equalizer Amplifier with ALC

Abstract: • Dual pre-amp with built-in ALC (pre-amp ´ 2 + ALC ´2). Due to high gain, recording amp can be formed separately variable monitor possible). ALC and direct motor drive obtained through SEPP output stage. Good ALC response balance between channels. Good reduced voltage characteristic.

Title: Driver Applications

Abstract: High DC current gain (5000 or greater).· Large current capacity and wide ASO.· Low saturation voltage : VCE(sat)=-0.8V typ.

Title: Fluorescent Display Tube Driver

Abstract: • 8 circuit independent Darlington driver. Capable of driving digits or segments. Built-in pull-down sink current. Rated at 55V/30mA

Title: HF Amp Applications

Abstract: · High fT (230MHz typ.) and small Cre (1.1 pF typ.). · Small NF (2.5dB typ.).

Title: FM Noise Canceller

Abstract: Pilot signal compensation function. By using in conjunction with PLL FM multiplex stereo emodulator with pilot signal canceller, adverse effect caused by pilot signal can be compensated. Low distortion factor : THD=0.02%, 300mV. Good space facator due to single end package. Variable input type noise AGC system.

Title: B/W TV Synchronization, Deflection Circuit

Abstract: Multifunction and small-size (DIP-16). Minimum number of parts required. Horizontal and vertical oscillators being stable to variation ambient temperature and supply voltage owing to small warming-up drift. Small variation of horizontal oscillation frequency.

Title: HF Amplifier Applications

Abstract: FBET series. · High fT and small Cre.

Title: 6-Channel Driver Array

Abstract: 6 independent Darlington drivers. Capable of driving digits or segments. On-chip sink current circuit for pull-down. Rated at 55V/25mA.

Title: 8-Channel Driver Array

Abstract: • 8-channel independent Darlington driver. Capable of driving digits or segments. On-chip sink current circuit for pull-down. 55V/30mA rating.

Title: 2SD2712 NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications

Abstract: High DC current gain.Wide ASO.Low saturation voltage.Adoption of MBIT process.

Title: FW507 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and a short reverse recovery time, low forward voltage schottky barrier diode facilitating high-density mounting.The FW507 incorporates two chips being equivalent to the MCH3312 and the SB1003M in one package.

Title: TN4Q02 ExPD (Excellent Power Device) Quasi-Resonant Switching Power Supply Applications

Abstract: Original control IC for Quasi-resonant type.High voltage Power MOSFET with current sense.Low input voltage protection (Automatic reset) Over voltage protection (Latch).Over current protection (Pulse-by-pulse).

Title: Quasi-Resonant Switching Power Supply Applications

Abstract: Original control IC for Quasi-resonant type. High voltage Power MOSFET with current sense. Low input voltage protection (Automatic reset) Over voltage protection (Latch). Over current protection (Pulse-by-pulse).

Title: Quasi-Resonant Switching Power Supply Applications

Abstract: Original control IC for Quasi-resonant type. High voltage Power MOSFET with current sense. Low input voltage protection (Automatic reset) Over voltage protection (Latch). Over current protection (Pulse-by-pulse).

Title: Quasi-Resonant Switching Power Supply Applications

Abstract: Original control IC for Quasi-resonant type. High voltage Power MOSFET with current sense. Low input voltage protection (Automatic reset) Over voltage protection (Latch). Over current protection (Pulse-by-pulse).

Title: Brushless motor Driver IC

Abstract: Three-phase bipolar driver. Direct PWM drive . Built-in forward/reverse switching circuit

Title: LA7784- Monolithic Linear IC Downconverter IC for Digital CATV

Abstract: The LA7784 is a downconverter IC for digital CATV.It accepts RF input frequencies from 50 to 150MHz and supports the DOCSIS(USA) and Euro-DOCSIS(Eurpe) standards.

Title: LA8151V Monolithic Linear IC Downconverter IC for Digital CATV

Abstract: The LA8151V is a downconverter IC for digital CATV.It accepts RF input frequencies from 50 to 280MHz and supports the DOCSIS(USA) and Euro-DOCSIS(Eurpe) standards.

Title: SBJ100-04J Schottky Barrier Diode (Twin Type · Cathode Common)40V, 10A Rectifier

Abstract: Small reverse current (IR typ=5mA) due to adoption of JBS (junction barrier schottky) structure. Low forward voltage (VF typ=0.48V).High temperature operation is possible (Tj=150°C).High surge breakdown voltage.

Title: 2SK3737 N-Channel Silicon MOSFET FM Tuner, VHF Amplifier Applications

Abstract: Low noise.High power gain.Small reverse transfer capacitance.

Title: SBR250-10J Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 25A Rectifier

Abstract: Low reverse current.Low switching noise.High reliability due to highly reliable planar structure.Attachment workability is good by Mica-less package.

Title: SBR160-10J Schottky Barrier Diode (Twin Type · Cathode Common)100V, 16A Rectifier

Abstract: Low reverse current.Low switching noise.High reliability due to highly reliable planar structure.Attachment workability is good by Mica-less package.

Title: EC4407KF N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.1.8V drive.mounting height : 0.4mm.

Title: EC4307KF P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.1.8V drive.mounting height : 0.4mm.

Title: EC4K01KF P-Channel Silicon MOSFET Condenser Microphone Applications

Abstract: EC4K01KF is possible to make applied sets smaller and slimmer.Especially suited for use in condenser microphone for audio equipments and telephones.Excellent voltage characteristic.Excellent noise characteristic.

Title: 2SB1737 PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications

Abstract: High DC current gain.Wide ASO.Low saturation voltage.Adoption of MBIT process.

Title: LA76004M - Monolithic Linear IC Video Signal Y/C Separator IC

Abstract: The LA76004M separates a video signal into Y and C components. It includes an on-chip 2H CCD delay line and achieves a significant reduction in flicker and noise by using a 3-line Y/C separation circuit.

Title: LA7600M - Monolithic Linear IC Video Signal Y/C Separator IC

Abstract: The LA7600M separates a video signal into Y and C components. It includes an on-chip 2H CCD delay line and achieves a significant reduction in flicker and noise by using a 3-line Y/C separation circuit.

Title: SBT250-06L Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 25A Rectifier

Abstract: Guaranteed up to Tj=150°C.Low forward voltage (VF max=0.60V).Fast reverse recovery time.Low switching noise.High reliability due to highly reliable planar structure.

Title: SBT350-06L Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 35A Rectifier

Abstract: Guaranteed up to Tj=150°C.Low forward voltage (VF max=0.60V).Fast reverse recovery time.Low switching noise.High reliability due to highly reliable planar structure.

Title: SB2003M Schottky Barrier Diode 30V, 2.0A Rectifier

Abstract: Low switching noise.Low leakage current and high reliability due to highly reliable planar structure.Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm).

Title: SS0310M Schottky Barrier Diode 100V, 0.3A Rectifier

Abstract: Low Switching noise.Low forward voltage (IF=0.3A, VF max=0.57V).Ultrasmall package permitting SS0310M applied sets to be made small and slim.

Title: SB0503SH Schottky Barrier Diode 30V, 0.5A Rectifier

Abstract: Low Switching noise.Low leakage current and high reliability due to highly reliable planar structure.Ultrasmall package permitting SB0503SH applied sets to be made small and slim.

Title: SB1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier

Abstract: Low switching noise.Low leakage current and high reliability due to highly reliable planar structure.Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.85mm).

Title: SBE811 Schottky Barrier Diode 30V, 2.0A Rectifier

Abstract: Small switching noise.Low leakage current and high reliability due to highly reliable planar structure.Ultrasmall package permitting applied sets to be small and slim.

Title: TT2218LS NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications

Abstract: High speed. High breakdown voltage (VCBO=1500V).High reliability (Adoption of HVP process).Adoption of MBIT process.On-chip damper diode.

Title: LA4915 - Monolithic Linear IC BTL 5W t#typical 2-channel BTL high-efficency power amplifier

Abstract: The LA4915 is a BTL two-channel power amplifier for use in audio systems. Increases in the number components are held to a minimum by adopting both a signal-following type switching scheme in the amplifier's output stage power supply, ande a nonlinear amplifier that has nonlinear characteristics in the signal system.

Title: TV Horizontal Deflection Output, High-Current Switching Applications

Abstract: Capable of efficient drive with small internal loss due to excellent tf.

Title: SCH2821 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a N-Channel Sillicon MOSFET and a Schottky Barrier contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: SB1003M Schottky Barrier Diode 30V, 1A Rectifier

Abstract: Low Switching noise.Low leakage current and high reliability due to highly reliable planar structure.Ultrasmall package permitting SB1003M applied sets to be made small and slim.

Title: 2SC6022 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Abstract: Adoption of FBET and MBIT processes.Large current capacitance. Low collector-to-emitter saturation voltage.High-speed switching.Narrow hFE range.High allowable power dissipation.

Title: 2SC6020 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Abstract: Adoption of FBET and MBIT processes.Large current capacitance. Low collector-to-emitter saturation voltage.High-speed switching.Narrow hFE range.High allowable power dissipation.

Title: 2SA2168 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Abstract: Adoption of MBIT process.High breakdown voltage and large current capacity.

Title: VEC2607 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

Abstract: The best suited for inverter applications. The VEC2607 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. Low voltage drive. Mounting height 0.75mm.

Title: SCH2808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a N-Channel Sillicon MOSFET (SCH1412) and a Schottky Barrier Diode (SS0503)contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: ECH8301 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.

Title: SVC382 Diffused Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications

Abstract: Twin type varactor diode for low-voltage AM electronic tuning use.Low voltage (4.5V).High Q.

Title: SVC387 Hyper-Abrupt Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications

Abstract: Twin type varactor diode for AM electronic tuning use.Miniaturization and high-integration of tuner sets can be easily achieved due to the small package.High capacitance ratio and high quality factor.Provided in a tape reel packaging.Surface mount type.

Title: FW232A N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: 2.5V drive.Composite type, facilitating high-density mounting.

Title: LB11967V - Monolithic Linear IC Bariable Speed Single-Phase Full-Wave Pre-Driver For Fan Motor

Abstract: Tle LB11967V is a single-phase bipolar varible speed fan motor predriver that works with an external PWM signal.A highly efficient, quiet and low power consumption motor driver circuit, with a large speed, can be implemented by adding a small number of external components.

Title: SBS808M Schottky Barrier Diode 15V, 1A Rectifier

Abstract: Low forward voltage (IF=0.5A, VF max=0.35V) (IF=1A, VF max=0.43V).Composite type with 2 low VF SBDs in one package, facilitating high-density mounting.Ultrasmall package permitting applied sets to be small and slim.

Title: SBT350-06J Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 35A Rectifier

Abstract: Tj=150°C. Low forward voltage (VF max=0.60V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Mica-less package facilitating easy mounting

Title: ECH8601R N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Built-in gate protection resistor.2.5V drive.Best suited for LiB charging and discharging Switch.Common-drain type.

Title: 2SK2433 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Low-voltage drive.Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.

Title: SBT150-06J Schottky Barrier Diode (Twin Type · Cathode Common)60V, 15A Rectifier

Abstract: Tj=150°C. Low forward voltage (VF max=0.58V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Mica-less package facilitating easy mounting.

Title: SCH2601N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

Abstract: The SCH2601 incorporates two elements in the same package which are N-channel MOSFETs, thereby enabling high-density mounting. Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD (typ 300V) [with a protection diode connected between the gate and source].

Title: 2SK3944 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance. Ultrahigh-speed switching. 4V drive.

Title: LA6584M - Monolithic Linear IC BTL Driver Single-Phase Full-Wave Fan Motor Driver

Abstract: The LA6584M is a Single-phase bipolar fan motor is put into silent driving by means of BTL output linear drive,offering high efficiency and power saving by suppressing the reactive current. Lock protection and rotation signal(FG,RD)circuits are built in,ensuring optimum application to small fans for notebook PC,consumer equipment power supply, caraudio system, CPU cooler,etc. that require high reliabilty and low noise.

Title: LA6586T - Monolithic Linear IC BTL Driver Single-Phase Full-Wave Fan Motor Driver

Abstract: The LA6586T is a Single-phase bipolar fan motor is put into silent driving by means of BTL output linear drive,offering high efficiency and power saving by suppressing the reactive current. Lock protection and rotation signal(FG,RD)circuits are built in,ensuring optimum application to small fans for notebook PC,consumer equipment power supply, caraudio system, CPU cooler,etc. that require high reliabilty and low noise.

Title: SBT250-06J Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 25A Rectifier

Abstract: Tj=150°C. Low forward voltage (VF max=0.60V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package.

Title: SS1003M Schottky Barrier Diode 30V, 1A Rectifier

Abstract: Small Switching noise.Low forward voltage(IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm).

Title: SS2003M Schottky Barrier Diode 30V, 2.0A Rectifier

Abstract: Small Switching noise.Low forward voltage (IF=2A, VF max=0.40V).Ultrasmall package permitting applied sets to be small and slim.

Title: FW225 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: The best suited for motor drive applications.Low Qg.Composite type, facilitating high-density mounting.

Title: 2SC6021 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Abstract: Adoption of FBET and MBIT processes.Large current capacitance.Low collector-to-emitter saturation voltage.High-speed switching.Narrow hFE range.High allowable power dissipation.

Title: 2SC6019 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Abstract: Adoption of FBET and MBIT processes.Large current capacitance.Low collector-to-emitter saturation voltage.High-speed switching.Narrow hFE range.High allowable power dissipation.

Title: 2SJ645 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.

Title: 2SK3615 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance. Ultrahigh-speed switching. 4V drive.

Title: VEC2403 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: The best suited for load switching applications.Low ON-resistance.Composite type facilitating high-density mounting.2.5V drive.Mounting high 0.75mm.

Title: 2SK3912 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance. Ultrahigh-speed switching. 4V drive.

Title: LA5160AM - Monolithic Linear IC 5V/0.1A Constant-Voltage Power Supply

Abstract: The LA5160AM is a general-purpose constant-voltage power supply IC incorporating the output ON/OFF function,which offers advantages such as small current drain when output OFF and saves power dissipation of the Equipment.

Title: SCH2602 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

Abstract: The SCH2602 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON- resistance and high-speed switching, thereby enabling high-density mounting.Low ON-resistance.2.5V drive (N-ch), 1.8V drive (P-ch).

Title: 2SK3618 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance. Ultrahigh-speed switching. 4V drive.

Title: 2SC6043 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

Abstract: Adoption of MBIT process.High current capacitance.Low collector-to-emitter saturation voltage.High-speed switching.

Title: SB0509V Schottky Barrier Diode 90V, 0.5A Rectifier

Abstract: Fast reverse recovery time (trr max=20ns).Low switching noise.Low leakage current and high reliability due to highly reliable planar structure.

Title: LA47510 Monolithic Linear IC BTL (50W-4) Power IC for Car Stereo Systems

Abstract: The LA47510 is a BTL 4-channel (50W-4) power IC for car stereo. The output stage uses a pure complementaryformat with a V-PNP transistor on the upper side and a NPN transistor on the lower side, making it possible to obtainhigh power output and excellent sound quality.This IC incorporates various functions (standby switch, mute function, full complement of protection circuits) neededfor car audio, and also has a self-check (output offset detection) function.

Title: LV23200T - Bi-CMOS IC For Home Stereo System 1-chip Tuner IC Incorporating PLL

Abstract: The LV23200T is a one chip tuner IC Incorporating PLL for home stereo system.

Title: High-Speed Switching Applications

Abstract: Fast switching speed.High breakdown voltage.

Title: High-Speed Switching Applications

Abstract: Fast switching speed.High breakdown voltage.

Title: LC875832A LC875824A LC875816A CMOS IC ROM 32K/24K/16K byte, RAM 1024 byte on-chip 8-bit 1-chip Microcontroller

Abstract: The LC875832A/24A/16A are 8-bit microcomputers that, centered around a CPU running at a minimum buscycle time of 100ns, integrate on a single chip a number of hardware features such as 32K/24K/16K byte ROM 1024 byteRAM, sophisticated 16-bit timers/counters (may be divided into 8-bit timers), a 16-bit timer/counter (may be divided into8-bit timers/counters or 8-bit PWMs), four 8-bit timers with a prescaler, a base timer serving as a time-of-day clock, ahigh-speed clock counter, a synchronous SIO interface (with automatic block transmission/reception capabilities), anasynchronous/synchronous SIO interface, a UART interface (full duplex), an 8-bit 11-channel AD converter, two 12-bitPWM channels, a system clock frequency divider, ROM correction function , and a 22-source 10-vector interrup...

Title: LC875832A LC875824A LC875816A CMOS IC ROM 32K/24K/16K byte, RAM 1024 byte on-chip 8-bit 1-chip Microcontroller

Abstract: The LC875832A/24A/16A are 8-bit microcomputers that, centered around a CPU running at a minimum buscycle time of 100ns, integrate on a single chip a number of hardware features such as 32K/24K/16K byte ROM 1024 byteRAM, sophisticated 16-bit timers/counters (may be divided into 8-bit timers), a 16-bit timer/counter (may be divided into8-bit timers/counters or 8-bit PWMs), four 8-bit timers with a prescaler, a base timer serving as a time-of-day clock, ahigh-speed clock counter, a synchronous SIO interface (with automatic block transmission/reception capabilities), anasynchronous/synchronous SIO interface, a UART interface (full duplex), an 8-bit 11-channel AD converter, two 12-bitPWM channels, a system clock frequency divider, ROM correction function , and a 22-source 10-vector interrup...

Title: LC875832A LC875824A LC875816A CMOS IC ROM 32K/24K/16K byte, RAM 1024 byte on-chip 8-bit 1-chip Microcontroller

Abstract: The LC875832A/24A/16A are 8-bit microcomputers that, centered around a CPU running at a minimum buscycle time of 100ns, integrate on a single chip a number of hardware features such as 32K/24K/16K byte ROM 1024 byteRAM, sophisticated 16-bit timers/counters (may be divided into 8-bit timers), a 16-bit timer/counter (may be divided into8-bit timers/counters or 8-bit PWMs), four 8-bit timers with a prescaler, a base timer serving as a time-of-day clock, ahigh-speed clock counter, a synchronous SIO interface (with automatic block transmission/reception capabilities), anasynchronous/synchronous SIO interface, a UART interface (full duplex), an 8-bit 11-channel AD converter, two 12-bitPWM channels, a system clock frequency divider, ROM correction function , and a 22-source 10-vector interrup...

Title: LA4663N Two Channel 16-W BTL General-Purpose Audio Power Amplifier

Abstract: The LA4663N is a BTL 2-channel power amplifier IC that was developed for ease of use in general audio applications.In addition to providing improvements in a wide range of electrical characteristics, the LA4663N aims for improvedlistenability and an excellent cost-performance ratio.

Title: LC87F5864B CMOS IC FROM 64K byte, RAM 2048 byte on-chip 8-bit 1-chip Microcontroller

Abstract: The SANYO LC87F5864B is an 8-bit microcomputer that, centered around a CPU running at a minimum bus cycle time of100ns, integrates on a single chip a number of hardware features such as 64K byte flash ROM (onboard programmable),2048 byte RAM, an on-chip debugger, sophisticated 16-bit timers/counters (may be divided into 8-bit timers), a 16-bittimer/counter (may be divided into 8-bit timers/counters or 8-bit PWMs), four 8-bit timers with a prescaler, a base timerserving as a time-of-day clock, a high-speed clock counter, a synchronous SIO interface (with automatic blocktransmission/reception capabilities), an asynchronous/synchronous SIO interface, a UART interface (full duplex), an 8-bit11-channel AD converter, two 12-bit PWM channels, a system clock frequency divider, and a 22-source 1...

Title: SCH2819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a N-Channel Sillicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: Drivers Applications

Abstract: High DC current gain (4000 or more).Large current capacity and wide ASO.Low saturation voltage.

Title: Drivers Applications

Abstract: High DC current gain (4000 or more).Large current capacity and wide ASO.Low saturation voltage.

Title: 2SC6024 NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications

Abstract: Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14GHz typ (VCE=1V).: fT=21GHz typ (VCE=3V). Low operating voltage. High gain : ½S21e½2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless package (1.4mm50.8mm50.6mm).

Title: TN6Q03 ExPD (Excellent Power Device) Quasi-Resonant Switching Power Supply ExPD

Abstract: Quasi-resonant type original control IC.High voltage power MOSFET with current sense.Low input voltage protection (self reset).Overvoltage protection (latch).Overcurrent protection (pulse-by-pulse).

Title: TN6Q04 ExPD (Excellent Power Device) Quasi-Resonant Switching Power Supply ExPD

Abstract: Quasi-resonant type original control IC.High voltage power MOSFET with current sense.Low input voltage protection (self reset).Overvoltage protection (latch).Overcurrent protection (pulse-by-pulse).

Title: TIG014SS N-Channel IGBT Light-Controlling Flash Applications

Abstract: Low-saturation voltage.4.0V drive.Enhansment type.Built-in Gate-to-Emitter protection diode.

Title: 2SJ646 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: 2SK3746 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications

Abstract: Low ON-resistance, low input capacitance, ultrahigh-speed switching.• High reliability (Adoption of HVP process).Avalanche resistance guarantee.

Title: VEC2811 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: LV1115/M - Bi-CMOS LSI Surround Processor ICs for Electronic Volume Control

Abstract: The LV1115/M are Sound Processor ICs developed for use in TV sets.They incorporate the surround processing functions including(AViSS),pseudo stereo function, auto gain control,and the major functional blocks of an electronic volume control IC.

Title: LV1115/M - Bi-CMOS LSI Surround Processor ICs for Electronic Volume Control

Abstract: The LV1115/M are Sound Processor ICs developed for use in TV sets.They incorporate the surround processing functions including(AViSS),pseudo stereo function, auto gain control,and the major functional blocks of an electronic volume control IC.

Title: 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

Abstract: Adoption of MBIT process.Large current capacitance.Low collector-to-emitter saturation voltage.High-speed switching.

Title: 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

Abstract: Adoption of MBIT process.Large current capacitance.Low collector-to-emitter saturation voltage.High-speed switching.

Title: 2SJ634 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive. DC / DC converter.

Title: 2SJ635 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive. DC / DC converter.

Title: CPH5901 High-Frequency Amplifier. AM Amplifier.Low-Frequency Amplifier Applications

Abstract: Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly.The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one package.Common drain and emitter.

Title: 2SK3492 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: 2SC6044 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

Abstract: Adoption of MBIT process.Low collector-to-emitter saturation voltage.High current capacity.High-speed switching.

Title: SCH1419 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.2.5V drive.

Title: SBS811 Schottky Barrier Diode 30V, 2.0A Rectifier

Abstract: Small Switching noise.Low forward voltage (IF=2A, VF max=0.40V).

Title: ECH8304 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Best suited for load switching.Low ON-resistance.1.8V drive.

Title: ECH8311 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Best suited for load switching.Low ON-resistance.2.5V drive.

Title: CPH6901 N-Channel Silicon Junction FET Low-Frequency General-Purpose Amplifier,Differential Amplifier, Analog Switch Applications

Abstract: Composite type with 2 FET contained in a CP package currently in use, improving the mounting efficiency greatly.The CPH6901 is formed with two chips, being equivalent to the 2SK303, placed in one package.Optimal for differential amplification due to excellent thermal equilibrium and pair capability.

Title: VEC2303 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Best suited for load switches.1.8V drive.Composite type, facilitating high-density mounting.Mounting height 0.75mm.

Title: 50V/15A Switching Applications

Abstract: Low-saturation collector-to-emitter voltage :VCE(sat) =-0.5V max.Wide ASO leading to high resistance to breakdown

Title: 50V/15A Switching Applications

Abstract: Low-saturation collector-to-emitter voltage :VCE(sat) =-0.5V max.Wide ASO leading to high resistance to breakdown

Title: SBT250-04J Schottky Barrier Diode (Twin Type · Cathode Common) 40V, 25A Rectifier

Abstract: Guaranteed up to Tj=150°C.Low forward voltage (VF max=0.55V).Short reverse recovery time.Low switching noise.High reliability due to highly reliable planar structure.Attachment workability is good by Mica-less package.

Title: SBT350-04J Schottky Barrier Diode (Twin Type · Cathode Common)40V, 35A Rectifier

Abstract: Guaranteed up to Tj=150°C.Low forward voltage (VF max=0.55V).Short reverse recovery time.Low switching noise.High reliability due to highly reliable planar structure.Attachment workability is good by Mica-less package.

Title: LV1116N/NV - Bi-CMOS LSI Surround Processor ICs for Electronic Volume Control

Abstract: The LV1116N/NV are Sound Processor ICs developed for use in TV sets.They incorporate the surround processing functions including(AViSS),pseudo stereo function, (L+R) output,andthe major functional blocks of an electronic volume control IC.

Title: LV1116N/NV - Bi-CMOS LSI Surround Processor ICs for Electronic Volume Control

Abstract: The LV1116N/NV are Sound Processor ICs developed for use in TV sets.They incorporate the surround processing functions including(AViSS),pseudo stereo function, (L+R) output,andthe major functional blocks of an electronic volume control IC.

Title: SCH2810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: ECH8302 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.4V drive.

Title: 2SJ667 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.Motor drive, DC / DC converter.Avalanche resistance guarantee.

Title: MCH6622 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Title: 2SK3748 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications

Abstract: Low ON-resistance, low input capacitance, ultrahigh-speed switching.High reliability (Adoption of HVP process).Attachment workability is good by Mica-less package.Avalanche resistance guarantee.

Title: 2SK3825 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.Motor drive, DC / DC converter.Avalanche resistance guarantee.

Title: 2SK3826 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.Motor drive, DC / DC converter.Avalanche resistance guarantee.

Title: 2SK3827 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.Motor drive, DC / DC converter.Avalanche resistance guarantee.

Title: 2SK3828 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.Motor drive, DC / DC converter.Avalanche resistance guarantee.

Title: MCH6630 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.1.5V drive.High ESD Voltage (TYP 300V)[Built-in one side diode for protection between Gate-to-Source].Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Title: 2SK3823 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.Motor drive, DC / DC converter.Avalanche resistance guarantee.

Title: CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: DC / DC converter.Composite type with a P-Channel Sillicon MOSFET (MCH3307) and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: CPH6314 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.High-speed switching.4V drive.

Title: EC2C03C Diffused Junction Type Silicon Diode Variable Capacitance Diode for UHF Band VCO

Abstract: Low series resistance. rs=0.55W typ.Ultraminiature (1008size) and (0.6mm) leadless package.

Title: MCH3435 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.1.5V drive.High ESD Voltage (TYP 300V)[Built-in one side diode for protection between Gate-to-Source].

Title: CPH5831 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: DC / DC converters.Composite type with a N-Channel Sillicon MOSFET (MCH3406) and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: MCH3420 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: SCH2315 P-Channel Silicon MOSFETGeneral-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.1.8V drive.Composite type with two MOSFETs contained in a single package, facilitating high-density mounting.

Title: CPH5541 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications

Abstract: Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting.Ultrasmall package permitting applied sets to be small and slim.

Title: MCH5541 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications

Abstract: Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting.Ultrasmall package permitting applied sets to be small and slim.

Title: SBT80-06J Schottky Barrier Diode (Twin Type · Cathode Common)60V, 8A Rectifier

Abstract: Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.58V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure.Attachment workability is good by Mica-less package.

Title: CPH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications

Abstract: Composite type with a N-Channel Sillicon MOSFET (MCH3406) and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: 3LN03SS N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.High-speed switching.2.5V drive.High ESD Voltage (TYP 300V)[Built-in one side diode for protection between Gate-to-Source].

Title: 2SK3824 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.Motor drive, DC / DC converter.Avalanche resistance guarantee.

Title: MCH3335 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.2.5V drive.

Title: CPH3143 / CPH3243 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.9mm).High allowable power dissipation.

Title: CPH3143 / CPH3243 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.9mm).High allowable power dissipation.

Title: LA4810M - Monolithic Linear IC Stereo/Monaural BTL Power Amplifier

Abstract: The LA4810M stereo/monaural BTL Power Amplifier is an IC that has been developed for portable radios and compact radio cassette players/recorders containing a peramlifier,a power amplifier, and an electric volume control.

Title: SCH2807 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a N-Channel Sillicon MOSFET (SCH1407) and a Schottky Barrier Diode (SS05015) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: CPH6320 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.1.8V drive.

Title: MCH3143 / MCH3243 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm).High allowable power dissipation.

Title: MCH3143 / MCH3243 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm).High allowable power dissipation.

Title: MCH3144 / MCH3244 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm).High allowable power dissipation.

Title: MCH3144 / MCH3244 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm).High allowable power dissipation.

Title: MCH3145 / MCH3245 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm).High allowable power dissipation.

Title: MCH3145 / MCH3245 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm).High allowable power dissipation.

Title: MCH5824 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a P-Channel Sillicon MOSFET (MCH3447) and a Schottky Barrier Diode (SS05015) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: CPH5835 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a P-Channel Sillicon MOSFET (CPH3309) and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: CPH5517 PNP / NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

Abstract: Composite type with a PNP/NPN transistor contained in package, facilitating high-density mounting.The CPH5517 consists of two chips which are equivalent to the CPH3116 and the CPH3216, respectively.Ultrasmall package permitting applied sets to be small and slime (mounting height : 0.9mm).

Title: CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a P-Channel Sillicon MOSFET (MCH3312) and a Schottky Barrier Diode (SBS001) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: VEC2803 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: DC/DC converter.Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: SOP8901 PNP Epitaxial Planar Silicon Transistor N-Channel Silicon MOSFET Motor Bridge Circuit Applications

Abstract: Composite type with a PNP transistor and an N-ch Sillicon MOSFET contained in one package facilitating highdensity mounting.

Title: VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications

Abstract: Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.Ultrasmall package permitting applied sets to be made small and slim.

Title: MCH3447 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: VEC2605 P-Channel and N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 2.5V drive. Mounting height 0.75mm.

Title: ECH8616 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Ultrahigh-speed switching. 4V drive.Composite type, facilitating high-density mounting.

Title: 2SK3850 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Best suited for motor drive. Low ON-resistance.Low Qg.

Title: 2SK3720 N-Channel Silicon MOSFET FM Tuner, VHF-Band Amplifier Applications

Abstract: Low noise.High power gain.Small reverse transfer capacitance.

Title: CPH3338 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: CPH3430 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.2.5V drive.

Title: LA4631Monolithic Linear IC 5 W Two-Channel AF Power Amplifier for Audio Applications

Abstract: The LA4631 (5 W - 2 channels) is a single-ended power IC that has a pin arrangement similar to the LA4632 BTLpower IC (10 W - 2 channels). The LA4631's pin compatibility makes it possible to share a common printed circuitboard among a series of end products differentiated by power rank. (Note that the LA4632 is provided in an SIP-12Hpackage, and that it is necessary to provide a hole for the LA4631 pin 13 if the same printed circuit board is to beshared. Note also that certain external components differ.)

Title: LA4632 Monolithic Linear IC 10 W Two-Channel BTL AF Power Amplifier for Audio Applications

Abstract: The LA4632 is a pin compatible version of the LA4631 (5 W - two channel single ended type) BTL power amplifierIC. The LA4632's pin compatibility makes it possible to share a common printed circuit board among a series of endproducts differentiated by power rank. Note that the LA4631 has a pin 13, and that it is necessary to provide a hole forthis pin if the same printed circuit board is to be shared. Also, some of the external components used differ. TheLA4632 provides a full complement of built-in protection circuits, including protection against shorting to the powersupply, shorting to ground, load shorting, and excessive temperatures.

Title: MCH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications

Abstract: Composite type with a P-Channel Sillicon MOSFET (MCH3335) and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: FTS2052 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.4V drive.Mounting height 1.1mm.

Title: FTS2051 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.4V drive.Mounting height 1.1mm.

Title: SCH2505 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications

Abstract: Composite type with an PNP / NPN transistor contained in one package facilitating high-density mounting.Ultrasmall package permitting applied sets to be small and slim.

Title: SCH2503 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications

Abstract: Composite type with an PNP / NPN transistor contained in one package facilitating high-density mounting.Ultrasmall package permitting applied sets to be small and slim.

Title: MCH3219 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Abstract: Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Narrow hFE range. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). High allowable power dissipation.

Title: SCH2101 PNP Epitaxial Planar Silicon Transistor Switching, Driver Applications

Abstract: Composite type with 2 PNP transistors contained in a single package facilitating high-density mounting.Ultrasmall package permitting applied sets to be small and slim.

Title: CPH6613 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.1.8V drive.Composite type with two MOSFETs contained in a single package facilitating high-density mounting.

Title: ECH8608 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

Abstract: The ECH8608 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 2.5V drive.

Title: CPH5612 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.2.5V drive.Composite type with 2 MOSFETs contained in a single package, facilitaing-density mounting.

Title: CPH5839 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: DC / DC converter applications. Composite type with a N-Channel Sillicon MOSFET (MCH3409) and a schottky barrier diode (SBS005) contained in one package facilitating high-density mounting.[MOSFET] Low ON-resistance. Ultrahigh-speed switching. Low voltage drive.[SBD] Short reverse recovery time. Low forward voltage.

Title: MCH3218 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Abstract: Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Narrow hFE range. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). High allowable power dissipation.

Title: MCH3217 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Abstract: Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Narrow hFE range. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). High allowable power dissipation.

Title: CPH3145 / CPH3245 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation.

Title: CPH3145 / CPH3245 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation.

Title: CPH6610 N-Channel and P-Channel Silicon MOSFETs Load Switching Applications

Abstract: The CPH6610 incorporates a P-channel MOSFET (MCH3335) and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic.

Title: SB0203EJ Schottky Barrier Diode 30V, 200mA Rectifier

Abstract: Low switching noise.Low leakage current and high reliability due to highly reliable planar structure.Ultraminiature (1608 size) and thin (0.6mm) leadless package.

Title: SB0503EJ Schottky Barrier Diode 30V, 500mA Rectifier

Abstract: Low switching noise.Low leakage current and high reliability due to highly reliable planar structure.Ultraminiature (1608 size) and thin (0.6mm) leadless package.

Title: SS0203EJ Schottky Barrier Diode 30V, 200mA Rectifier

Abstract: Low switching noise.Low forward voltage (IF=150mA, VF max=0.4V) (IF=200mA, VF max=0.45V).Ultraminiature (1608 size) and thin (0.6mm) leadless package.

Title: SS0503EJ Schottky Barrier Diode 30V, 500mA Rectifier

Abstract: Low switching noise.Low forward voltage (IF=300mA, VF max=0.4V) (IF=500mA, VF max=0.45V).Ultraminiature (1608 size) and thin (0.6mm) leadless package.

Title: SCH1417 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.1.8V drive.

Title: CPH3144 / CPH3244 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation.

Title: CPH3144 / CPH3244 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Abstract: Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation.

Title: 3LP03M P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.High-speed switching.2.5V drive.High ESD Voltage (TYP 300V)[Built-in one side diode for protection between Gate-to-Source].

Title: SCH2817 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a N-Channel Silicon MOSFET (SCH1417) and a Schottky Barrier Diode (SS05015SH) contained in one package facilitating high-density mounting. [MOSFET]. Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: CPH3337 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.2.5V drive.

Title: CPH3331 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: CPH3437 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.2.5V drive.

Title: MCH5826 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a N-Channel Silicon MOSFET (MCH3456) and a Schottky Barrier Diode (SS05015SH) contained in one package facilitating high-density mounting. [MOSFET].Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: 2SK3820 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.4V drive.Ultrahigh-speed switching.Motor drive, DC / DC converter.Avalanche resistance guarantee.

Title: ECH8402 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.4V drive.

Title: TND309TD ExPD (Excellent Power Device)General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and DC / DC Converter Applications

Abstract: Inverter buffer. Monolithic structure(High voltage CMOS process adopted). Withstand voltage of 25V is assured. Wide range of operating voltage : 4.5V to 25V.Peak output current : 1A. Fast switching time(30ns typical at 1000pF load). Fully compatible input to TTL/CMOS (VIH=not more than 2.6V, at VDD=4.5 to 25V).

Title: 3LN03M N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.High-speed switching.2.5V drive.High ESD Voltage (TYP 300V)[Built-in one side diode for protection between Gate-to-Source].

Title: 2SC6025 NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications

Abstract: Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14GHz typ (VCE=1V).: fT=21GHz typ (VCE=3V). Low operating voltage. High gain : ½S21e½2=12.5dB typ (f=2GHz).

Title: ECH8305 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.4V drive.

Title: FTS2053 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.4V drive.Mounting height 1.1mm.

Title: EC4404C N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.High-speed switching.2.5V drive.High resistance to damage from ESD (typ 300V) [with a protection diode connected between the gate and source].

Title: 2SA2153 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Abstract: Adoption of MBIT process.Low saturation voltage.High current capacity and wide ASO.

Title: EC4304C P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.High-speed switching.2.5V drive.High resistance to damage from ESD (typ 300V) [with a protection diode connected between the gate and source].

Title: 2SK3352 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistanceUltrahigh-speed switching.4V drive.DC / DC converter applications.

Title: ECH8611 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.1.8V drive.

Title: CPH3438 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: CPH3439 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.2.5V drive.

Title: 2SC6023NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications

Abstract: Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14.5GHz typ (VCE=1V).: fT=22GHz typ (VCE=3V). Low operating voltage.High gain : ½S21e½2=14dB typ (f=2GHz).

Title: CPH5614 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.

Title: 2SC5990 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Abstract: Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation.

Title: 2SK3617 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: SVC388 Hyper-Abrupt Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications

Abstract: Twin type varactor diode for AM electronic tuning use.High capacitance ratio and high quality factor.Provided in a tape and reel packaging format.

Title: CPH6616 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Excellent ON-resistance characteristic.Best suited for load switches.4V drive.

Title: MCH3359 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: MCH3459 N-Channel Silicon MOSFET General-Purpose Switching Device Application

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: MCH3460 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: SCH2812MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Abstract: Composite type with a N-channel sillicon MOSFET (SCH1412) and a Schottky barrier diode (SS05015SH) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage.

Title: CPH6612 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.1.8V drive.Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Title: SCH1411 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.High-speed switching.4V drive.

Title: SCH1311 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: SCH1404 N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: LA4627N Monolithic Linear IC Two-Channel Audio Frequency Power Amplifier

Abstract: The LA4627N is a 2-channel power amplifier developed for use in radio/cassette player products.The LA4627N reduces the number of required external components by 50% over earlier products (BS/NF capacitors and oscillation prevention RC components) and thus can contribute significantly to space saving in end products.

Title: SCH1306 N1504PE TS IM TB-00000522 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.2.5V drive.

Title: SCH1301P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.1.8V drive.

Title: SCH1304 -Channel Silicon MOSFET General-Purpose Switching Device Applications

Abstract: Low ON-resistance.Ultrahigh-speed switching.4V drive.

Title: IGBT Module SK 20 GD 065 Target Data

Abstract: Compact design, One screw mounting and High short circuit capability

Title: Bridge Rectifier SK 50 B 06 UF Target Data

Abstract: Compact design, One screw mounting and High short circuit capability

Title: Thyristor / Diode Modules SKKH 162 H4 SKKT 162 H4

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 162 H4 SKKT 162 H4

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 162 H4 SKKT 162 H4

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 162 H4 SKKT 162 H4

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 132 H4 SKKT 132 H4

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Hard soldered joints for reliability.

Title: Thyristor / Diode Modules SKKH 132 H4 SKKT 132 H4

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Hard soldered joints for reliability.

Title: Thyristor / Diode Modules SKKH 132 H4 SKKT 132 H4

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Hard soldered joints for reliability.

Title: Thyristor / Diode Modules SKKH 132 H4 SKKT 132 H4

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Hard soldered joints for reliability.

Title: IGBT Module SK 55 GARL 065 E Preliminary Data

Abstract: Compact design, One screw mounting and High short circuit capability

Title: Thyristor / Diode Modules SKKH 250 SKKT 250

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 250 SKKT 250

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 250 SKKT 250

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 250 SKKT 250

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 250 SKKT 250

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 250 SKKT 250

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 250 SKKT 250

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 280 SKKT 280

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 280 SKKT 280

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Thyristor / Diode Modules SKKH 280 SKKT 280

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKE 380

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKE 380

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 380

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 380

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 380

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 380

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 380

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 380

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 260

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 260

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 260

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 260

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: Rectifier Diode Modules SKKD 260

Abstract: Heat transfer through aluminium nitride ceramic isolated metal baseplate. Precious metal pressure contacts for high reliability. Thyristor with amplifying gate.

Title: SEMICELL THYRISTOR SKT Tabl. 7,5 Qu ZG bond

Abstract: High current density due to mesa technology. High surge current. Compatible to thick wire bonding.

Title: SPT IGBT Module SKiM 150GD128D Target Data

Abstract: Low Inductance case. Fast & soft inverse CAL diodes. Integrated temperature sensor.

Title: SEMICELL CAL-DIODE SKCD 61 C 120 I3

Abstract: Small switching losses. High ruggedness. Compatible to thick wire bonding.

Title: SEMICELL CAL-DIODE SKCD 81 C 120 I3

Abstract: Small switching losses. High ruggedness. Compatible to thick wire bonding.

Title: SEMICELL CAL-DIODE SKCD 121 C 120 I3

Abstract: Small switching losses. High ruggedness. Compatible to thick wire bonding.

Title: IGBT Module SK 25 GH 063 Preliminary Data

Abstract: Compact design, One screw mounting and High short circuit capability

Title: SEMICELL CAL-DIODE SKCD 47 C 170 I

Abstract: Small switching losses. High ruggedness. Compatible to thick wire bonding.

Title: SEMICELL CAL-DIODE SKCD 61 C 170 I

Abstract: Small switching losses. High ruggedness. Compatible to thick wire bonding.

Title: Three phase antiparallel Thyristor Module SKUT 85 T Target Data

Abstract: Compact design, One screw mounting and High short circuit capability

Title: Three phase antiparallel Thyristor Module SKUT 85 T Target Data

Abstract: Compact design, One screw mounting and High short circuit capability

Title: 3-phase bridge rectifier +3-phase bridge inverter SK 20 DGD 065 ET Preliminary Data

Abstract: Compact design, One screw mounting and High short circuit capability

Title: IGBT Module SK 45 GH 063 Preliminary Data

Abstract: Compact design, One screw mounting and High short circuit capability

Title: 3-phase bridge rectifier + 3-phase bridge inverter SK 25 DGD 065 ET Preliminary Data

Abstract: Compact design, One screw mounting and High short circuit capability

Title: 3-phase bridge inverter SKiiP 39AC065V2

Abstract: Ultrafast NPT IGBTs. Highly reliable spring contacts for electrical connections. Robust and soft freewheeling diodes in CAL technology.

Title: 3-phase bridge inverter SKiiP 37AC126V2

Abstract: Fast Trench IGBTs. Highly reliable spring contacts for electrical connections. Robust and soft freewheeling diodes in CAL technology.

Title: 3-phase bridge inverter SKiiP 38AC126V2

Abstract: Fast Trench IGBTs. Highly reliable spring contacts for electrical connections. Robust and soft freewheeling diodes in CAL technology.