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PICO AMPERE DIODES

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE BVR ? -30V REVERSE CAPACITANCE Crss ? 2.0pF

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Relevant Keywords:

PAD1, PAD , JPAD5, PAD100, JPAD20, PAD10, JPAD2

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N-channel 500V - 0.32 ohm - 12A - TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 - FDmesh Power MOSFET (with fast diode)

May 2008 Rev 11/10STTH3R04Ultrafast recovery diode

N-channel 600 V, 0.09 &#937;, 45 A TO-247 FDmesh&#8482; Power MOSFET (with fast diode)

A power factor corrector with MDmesh&#8482; II and SiC diode

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode provides ESD protection. These devices feature a poly-s

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Relevant Keywords:

SST21, SD215DE, SST215, SD213DE, SST213, SD211DE, SST211, SD-SST211/213/215

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N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

HIGH SPEED N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

SINGLE N-CHANNEL JFET

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns

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Relevant Keywords:

J/SST111

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CURRENT REGULATING DIODES

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V

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Relevant Keywords:

J501, J500

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Schottky barrier diode

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PICO AMPERE DIODES

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE BVR ? -30V REVERSE CAPACITANCE Crss ? 2.0pF

Datasheet URL:

Relevant Keywords:

(SST/J)PAD5, PAD200, (SST/J)PAD20, PAD20, (SST/J)PAD2, SST/J)PAD500, PAD2, (SST/J)PAD10, SST/J)PAD200, (SST/J)PAD50, (SST/J)PAD1, SST/J)PAD100

Related Datasheets:

Schottky barrier diode

BZX384 series Voltage regulator diodes

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N-channel 500V - 0.32 ohm - 12A - TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 - FDmesh Power MOSFET (with fast diode)

May 2008 Rev 11/10STTH3R04Ultrafast recovery diode

N-channel 600 V, 0.09 &#937;, 45 A TO-247 FDmesh&#8482; Power MOSFET (with fast diode)

A power factor corrector with MDmesh&#8482; II and SiC diode

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

MONOLITHIC DUAL PICO AMPERE DIODES

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ? 30V REVERSE CAPACITANCE Crss = 0.75pF

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Relevant Keywords:

ID101 , ID100

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