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D18572EJ1V0DS00, D18572EJ1V0DS

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DESCRIPTION The 2SK3299B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate charge QG = 30 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A) · Gate voltage rating : ±30 V · Low on-state resistance RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 5.0 A) · Avalanche capability ratings ORDERING INFORMATION PART NUMBER LEAD PLA

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D18572EJ1V0DS00, D18572EJ1V0DS

S18528EJ1V0DS00, S18528EJ1V0DS

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DESCRIPTION The PD168104 is the motor driver IC with IRIS control circuit, operational amplifier and 4-ch H-bridge output. Smooth operation is possible for IRIS control with linear method. The package is 56-pin thin type QFN and then it helps reduce the mounting area and height. The PD168104 is suitable for the lens drive of a camcorder, DSC, etc. FEATURES · 5-ch H-bridge circuits employing power MOSFET Stepping motors driver : 4 circuits, IRIS driver : 1 circuit. · Low-voltage dri

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S18528EJ1V0DS00, S18528EJ1V0DS

D15290EJ4V0DS00, D15290EJ4V0DS

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DESCRIPTION PACKAGE DRAWING (Unit: mm) The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs with an average on-state current of 300 mA. The repeat peak 5.2 MAX. off-state voltages (and reverse voltages) are 400 and 600 V. Electrode connection 5.5 MAX. 1: Gate FEATURES 2: Anode · 400 and 600 V high-withstanding-voltage series of products 3: Cathode · The non-repetitive withstanding voltage is a high 700 V, making 1.5 12.7 MIN. it easy to harmonize the rise voltage of the surge

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D15290EJ4V0DS00, D15290EJ4V0DS

PN10549EJ02V0DS

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DESCRIPTION The PS7801C-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output side. An ultra small flat-lead package has been provided which realizes a reduction in mounting area of about 50% compared with the PS72xx series. It is suitable for high-frequency signal control, due to its low C × R, super low output capacitance, and low off-state leakage current. FEATURES PIN CONNECTION · Ultra small fla

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PN10549EJ02V0DS

MOS INTEGRATED CIRCUIT

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

The ?PD43256B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.Battery backup is available. And A and B versions are wide voltage operations.The ?PD43256B is packed in 28-pin PLASTIC DIP, 28-pin PLASTIC SOP and 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).

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PD43256B-Bxx, PD43256BGU-85L, PD43256BCZ-70LL, PD43256BGU-A85, PD43256B-Axx, PD43256BGU-70LL, PD43256BGW-85LL-9JL, PD43256BCZ-70L, PD43256BGU-A12, PD43256B, PD43256BGU-70L, PD43256BGW-70LL-9JL, PD43256B-xxLL, PD43256BGU-A10, M10770EJEV0DS00, PD43256BCZ-85LL, PD43256BGU-B12, PD43256B-xxL, PD43256BGU-85LL, M10770EJEV0DS, PD43256BCZ-85L, PD43256BGU-B10

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no title - download PDF datasheet, node 153074

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

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U11518J, U11590J, U11518E, U11590EJ2V0DS00, U11517J, U11539J, U11517E, U11597J, U11539E, U11597E

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DESCRIPTION The µPD78064B is a product in the µPD78064B Subseries within the 78K/0 Series. The Electro Magnetic Interference (EMI) noise generated inside the µPD78064B is reduced compared to the µPD78064 Subseries. A one-time PROM version, µPD78P064B that can operate in the same power supply voltage as the mask ROM version, and various development tools are also provided. For the details of functional description, refer to the following user's manual. Be sure to

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U11539E, U11597E, U11518J, U11590J, U11518E, U11590EJ2V0DS00, U11517J, U11539J, U11517E, U11597J

D17875EJ1V0DS00, D17875EJ1V0DS

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

FEATURES PACKAGE DRAWING (Unit: mm) · Directly driven by ICs having a 5 V power source. · Not necessary to consider driving current because of its high input impedance. · Possible to reduce the number of parts by omitting the bias resistor. ORDERING INFORMATION PART NUMBER PACKAGE 2SK1590A-T1B-AT SC-59 (Mini Mold) 2SK1590A-T2B-AT Marking: G16 Remark "-AT" indicates Pb-free (This product does not contain 1: Source Pb in external electrode and other parts.). "-T

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D17875EJ1V0DS00, D17875EJ1V0DS

S15418EJ3V0DS00, S15418EJ3V0DS

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DESCRIPTION The µ PD3768 is a high-speed and high sensitive color CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical signal and has the function of color separation. The µ PD3768 has 3 rows of 7500 pixels, and it is a 2-output/color type CCD sensor with 2 rows/color of charge transfer register, which transfers the photo signal electrons of 7500 pixels separately in odd and even pixels. Therefore, it is suitable for 600 dpi/A3 high-speed color d

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S15418EJ3V0DS00, S15418EJ3V0DS

D14133EJ4V0DS00, D14133EJ4V0DS

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DESCRIPTION ORDERING INFORMATION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3356 TO-3P FEATURES · Super low on-state resistance: RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 38 A) (TO-3P) RDS(on)2 = 12 m MAX. (VGS = 4 V, ID = 38 A) · Low Ciss: Ciss = 6300 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS &

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D14133EJ4V0DS00, D14133EJ4V0DS