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DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

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PI240MC-A4

Wide Aperture Spectroscopic Photodiode Arrays

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

AMI Semiconductor™s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ AMI Semiconductor™s proprietary CMOS image sensing technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with an optimized geometrical aspect ratio (50Âµm aperture pitch x 2500Âµm aperture width) fo

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Relevant Keywords:

AMIS-732512 , AMIS-732256, AMIS-732128

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400dpi CIS Module

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

the AMIS-710411-A7 (PI411MC-A7) is a contact imaging sensor (CIS) module that can operate from a single 5.0V supply. It is a linear scanning array composed of 11 AMIS-720422 (PI3022) imaging sensor chips. The AMIS-720422 is a 400 dots per inch (dpi) solid-state line imaging sensor chip with 128 photo sensitive elements, which are also a product of AMIS. Eleven of these devices are sequentially cascaded to form the linear scanning array with a total of 1408 photo sensing elements. This imaging de

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Relevant Keywords:

AMIS-720422, AMIS-710411-A7

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Power Management Module Operating Instruction Edi

IGBT intelligent power module (IPM) 17 A - 600 V - SDIP-25L molded

IGBT intelligent power module (IPM) 12 A - 600 V - SDIP-25L molded

600 V, 14 A SDIP 38L molded IGBT intelligent power module

February 2009 Rev 31/1515 SPZB260 ZigBee moduleFea

FSBB20CH60CL Smart Power Module

LED Channel Letter Illumination System LED Module

STD/SDT165Thyristor-Diode Modules, Diode-Thyristor

200dpi CIS Module

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

The AMIS-710225 (PI225MC-A6) is a contact imaging sensor (CIS) module, which is composed of 13 AMIS-720220 (PI3020) sensor chips. The AMIS-720220 is a 200 dots per inch (dpi) solid-state line imaging array, also a product of AMI Semiconductor. This imaging device is fabricated using MOS imaging sensor technology for high-speed performance and high sensitivity. The AMIS-710225 is suitable for scanning A6 size (104mm) documents with 8 dots per millimeter (dpm) resolution.

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Relevant Keywords:

AMIS-720220, AMIS-710225

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Power Management Module Operating Instruction Edi

IGBT intelligent power module (IPM) 17 A - 600 V - SDIP-25L molded

IGBT intelligent power module (IPM) 12 A - 600 V - SDIP-25L molded

600 V, 14 A SDIP 38L molded IGBT intelligent power module

February 2009 Rev 31/1515 SPZB260 ZigBee moduleFea

FSBB20CH60CL Smart Power Module

LED Channel Letter Illumination System LED Module

STD/SDT165Thyristor-Diode Modules, Diode-Thyristor

Low-Power Transceiver with Clock and Data Recovery

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

The AMIS-52100 is a low-cost, ultra-low power single chip transceiver. It combines the proven amplitude shift key/on-off key (ASK/OOK) modulation technology of the AMIS-52000 with data clock recovery. The AMIS-52100 is targeted at narrow band applications in the 402 to 405MHz range

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Relevant Keywords:

AMIS-52100-M, AMIS-52100-I, AMIS-52100, AMIS-52000

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4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor™s advanced CMOS technology to provide ultra-low active and standby power.

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Relevant Keywords:

N04Q1618, N04Q1618C2Bx-70C, N04Q1612C2Bx-15C1, N04Q1618C2Bx-15C1, N04Q1612C2Bx, N04Q1618C2Bx, N04Q1612, N04Q16yyC2B, N04Q1618C2B, N04Q16, N04Q1618C2Bx-85C

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PRECISION LOW POWER CMOS DUAL OP-AMPS

BS62UV256 Ultra Low Power CMOS SRAM 32K X 8 bit Pb-Free and Green package materials are compliant to RoHS

BS62LV8001 Very Low Power CMOS SRAM 1M X 8 bit and Green package materials are compliant to RoHS

BS62LV8001 Very Low Power CMOS SRAM 1M X 8 bit Pb-Free and Green package materials are compliant to RoHS

BS62LV4006 Very Low Power CMOS SRAM 512K X 8 bit Green package materials are compliant to RoHS

BS62LV4006 Very Low Power CMOS SRAM 512K X 8 bit Pb-Free and Green package materials are compliant to RoHS

BS62LV256 Very Low Power CMOS SRAM 32K X 8 bit Green package materials are compliant to RoHS

AMIS-40615 LIN Transceiver with 3.3V Voltage Regulator

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

The AMIS-40615 is a full-featured local interconnect network (LIN) transceiver designed to interface between a LIN protocol controller and the physical bus. The transceiver is implemented in AMI Semiconductor™s SmartPower, high-voltage, mixed-signal 0.35Âµm CMOS technology enabling both high-voltage analog circuitry and digital functionality to co-exist on the same chip.

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Relevant Keywords:

M-20544-001, AMIS40615, AMIS-40615

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1Mb Ultra-Low Power Asynchronous CMOS SRAM

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

he N01L163WN1A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using AMI Semiconductor™s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion.

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Relevant Keywords:

N01L163WN1AT2, N01L163WN1AT, N01L163WN1AB2, N01L163WN1AB, N01L163WN1AX-XX, N01L163WN1A

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BS62UV256 Ultra Low Power CMOS SRAM 32K X 8 bit Pb-Free and Green package materials are compliant to RoHS

BS62LV8001 Very Low Power CMOS SRAM 1M X 8 bit and Green package materials are compliant to RoHS

BS62LV8001 Very Low Power CMOS SRAM 1M X 8 bit Pb-Free and Green package materials are compliant to RoHS

BS62LV4006 Very Low Power CMOS SRAM 512K X 8 bit Green package materials are compliant to RoHS

BS62LV4006 Very Low Power CMOS SRAM 512K X 8 bit Pb-Free and Green package materials are compliant to RoHS

BS62LV256 Very Low Power CMOS SRAM 32K X 8 bit Green package materials are compliant to RoHS

BS62LV256 Very Low Power CMOS SRAM 32K X 8 bit Pb-Free and Green package materials are compliant to RoHS

BS62LV2006 Very Low Power CMOS SRAM 256K X 8 bit and Green package materials are compliant to RoHS

BS62LV2006 Very Low Power CMOS SRAM 256K X 8 bit Pb-Free and Green package materials are compliant to RoHS

BS62LV1600 Very Low Power CMOS SRAM 2M X 8 bit and Green package materials are compliant to RoHS

Issue Date: 26 Jul 2006 Rev.07-02-05 Page 1 of 2

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

DESCRIPTION AND PURPOSE: This is the Final PCN to IPCN 15533 located at www.onsemi.com announcing a change in lead frame and clip design for the listed performing a manufacturing change for all SMB CASE 403C packages (JEDEC DO-214AA) used for 50 Amp and 80 Amp Thyristor Surge Protection Devices (TSPD). This manufacturing change will effect clip and lead fame designs internal to the package construction. Device performance and reliability have not changed. There will be no changes to package dime

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MMT05B230T3G, SMT08B064T3G, MMT08B260T3, NP0900SAT3G, SMT05B230T3G, MMT05B310T3G, SMT08B310T3G, MMT08B350T3, NP3500SAT3G, MMT05B230T3, SMT05B350T3G, MMT08B064T3G, STM10000T3, NP0720SAT3G, SMT05B200T3G, MMT05B310T3, SMT08B310T3, MMT08B310T3G, NP3100SB1G, MMT05B064T3G, SMT05B311T3G, MMT08B064T3, SMT10002T3, NP0680SBT3G, SMT05B110T3G, MMT05B260T3G, SMT08B260T3G, MMT08B310T3, NP3100SB1, MMT05B064T3, SMT05B310T3G, MMT05B350T3G, SMT10001T3, NP0640SAT3G, SMT05B064T3G, MMT05B260T3, SMT08B230T3G, MMT08B260T3G, NP1100SAT3G, 8x20, SMT05B260T3G, MMT05B350T3, SMT08B350T3G, MMT08B350T3G, Rev.07-02-05

Contact Image Sensor

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

AMI Semiconductor™s AMIS-722402 (PI5002D) contact image sensor (CIS) consists of 1376 active pixels which enables the selection of 2400, 1200, 600, or 300 dots per inch (dpi) resolutions, and employs AMI Semiconductor™s proprietary CMOS image sensing technology. The sensor contains an on-chip output amplifier, power down circuitry and parallel transfer features that are uniquely combined with the present-day active-pixel-sensor technology. The image sensors are designed to be c

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Relevant Keywords:

AMIS-722402

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