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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

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Relevant Keywords:

SML60J62

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4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET IN TO-254 HERMETIC PACKAGE

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125 - 28V - 400MHz PUSH-PULL

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS. LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 13 dB MINIMUM.

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Relevant Keywords:

D1021UK

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GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 400MHz SINGLE ENDED

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 28V - 1GHz PUSH PULL

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GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 12.5VV - 1GHz SINGLE ENDED

N-CHANNEL POWER MOSFET

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE SIMPLE DRIVE REQUIREMENTS EASE OF PARALLELING

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Relevant Keywords:

IRFM150, 2N7224

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N-channel 30 V, 0.015 &#937;, 9 A, PowerFLAT&#8482; (3.3x3.3) STripFET&#8482; V Power MOSFET

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STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.159 Ω, 17 A MDmesh™ V Power MOSFET D2PAK, TO-220FP, TO-220, I2PAK, TO-247

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P.I.N. PHOTODIODE

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

The SMP600G-EL is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The can structure incorporates an photoptic response optical filter with peak transmission at 510nm. The cathode of the photodiode is electrically connected to the package.

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Relevant Keywords:

SMP600G-EL

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DN273 - Fiber Optic Communication Systems Benefit from Tiny, Low Noise Avalanche Photodiode Bias Supply

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MULTI-CHIP ARRAY 4 COMMON SOURCE P-CHANNEL MOSFETS AND 4 COMMON SOURCE N-CHANNEL MOSFETS

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

The MCA002 is a ceramic surface mount Mosfet array designed for high reliability application.

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Relevant Keywords:

MCA002

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DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

Silicon Planar Epitaxial NPN Transistor. High Rel and Screening Options Available.

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Relevant Keywords:

2N2223A

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P.I.N. PHOTODIODE

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

The SMP600G-FL is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The can structure incorporates an photoptic response optical filter with peak transmission at 510nm. The photodiode is electrically isolated from the package, which has a separate earth lead.

Datasheet URL:

Relevant Keywords:

SMP600G-FL

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1300 nm - 1550 nm, 3 GHz Linear PIN Photodiode

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DN273 - Fiber Optic Communication Systems Benefit from Tiny, Low Noise Avalanche Photodiode Bias Supply

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Si photodiodeThe S9032-02 is a color sensor molded

ADL5317 Avalanche Photodiode Bias Controller and Wide Range (5 nA to 5 mA) Current Monitor Data Sheet (Rev. 0)

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Enhanced Ultrafast Recovery Diode 600 Volt, 15 Amp

DatasheetPro — Thu, 04 Dec 2008 06:18:34 +0000

The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab's Graded Buffer Zone technology combined with low emitter efficiency and local lifetime control techniques.

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Relevant Keywords:

SML15EUZ06K, 15EUZ06K

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